dated : 26/04/2007 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 13007 npn silicon transistor for high voltage, high-speed power switching application absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 700 v collector emitter voltage v ceo 400 v emitter base voltage v ebo 9 v collector current i c 8 a total power dissipation (t a = 25 o c) p tot 2 w total power dissipation (t c = 25 o c) p tot 80 w junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce = 5 v, i c = 2 a h fe 10 - 70 - collector cutoff current at v cb = 700 v i cbo - - 100 a emitter cutoff current at v eb = 9 v i ebo - - 100 a collector base breakdown voltage at i c = 100 a v (br)cbo 700 - - v collector emitter breakdown voltage at i c = 10 ma v (br)ceo 400 - - v emitter base breakdown voltage at i e = 1 ma v (br)ebo 9 - - v collector emitter saturation voltage at i c = 5 a, i b = 1 a v ce(sat) - - 2 v base emitter saturation voltage at i c = 5 a, i b = 1 a v be(sat) - - 1.6 v current gain bandwidth product at v ce = 10 v, i c = 0.5 a f t 4 - - mhz collector base capacitance at v cb = 10 v, f = 0.1 mhz c cb - 110 - pf to-220 plastic package
dated : 26/04/2007 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 13007 to-220 package outline
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